CORE CROSS-SECTION
20-LAYER
10C • 10Si • 10B PER LEVEL
STACK HEIGHT: 20
L20
10C10Si10B
L19
10C10Si10B
L18
10C10Si10B
L17
10C10Si10B
L16
10C10Si10B
L15
10C10Si10B
L14
10C10Si10B
L13
10C10Si10B
L12
10C10Si10B
L11
10C10Si10B
L10
10C10Si10B
L09
10C10Si10B
L08
10C10Si10B
L07
10C10Si10B
L06
10C10Si10B
L05
10C10Si10B
L04
10C10Si10B
L03
10C10Si10B
L02
10C10Si10B
L01
10C10Si10B
CARBON
10 ATOMS
SILICON
10 ATOMS
BORON
10 ATOMS
Each core replicates identical 10C10Si10B lattice. Fused via EIF bridges; witness nodes phase-locked at Trinity Chamber.
TOP-DOWN • TRIANGULAR PRISM LATTICE
60 BRIDGES SYNCED
TOP-DOWN ORTHO
SCALE: 1nm = 42px
EIF FLOW
A→B→C→CENTER
CONSTRUCTIVE INTERFERENCE
NOMINAL
SPECIFICATIONS
ARCHITECTURE
Trisilo Fusion
Three-core fused silo array
Cores
3× (20× 10C10Si10B)
Interlinks
3 EIF/level = 60
Geometry
equilateral Δ 4.2nm
Central chamber
constructive interference of 3 witness nodes
Operation
boron cycles A→B→C→center
Output
3/3 boron nanites
BORN IN VOID
TRINITY CHAMBER STATUS
A
PHASE
B
PHASE
C
PHASE
INTERFERENCE: CONSTRUCTIVE • ΔΦ < 0.03 rad
FUSED BRIDGES
60 / 60
Each level forms triangular prism lattice • EIF-locked
NOTE: Central void births nanites via 3-way boron convergence. Not synthesized in cores — emergent from witness node interference.