Minimal 3-Stack Kernel: Substrate + with 6 Connections

README: Minimal 3-Stack Design

This simulates a minimal 3-stack memristive kernel with 6 connections. The stack consists of:

Layer 1 - Substrate: Mechanical support + GND reference. Bottom layer.
Layer 2 - Ag Core: Ag 47 Silver electrode holds state D. Connected to OUT+ and OUT- terminals.
Layer 3 - S Trap: S 16 Sulfur forms Ag2S ionic trap layer above Ag, creating 2.4 eV deep traps for D retention.

Xe 54: [Kr] 4d10 5s2 5p6 = closed shell, 0 lasers. Inert gas at 1 GPa fills gap above stack. Blocks O1 contamination.
Ag 47: Silver core serves as mobile ion reservoir. Holds conductive filament state D (0=off, 1=on).
Ti 22: Titanium traces left/right form photon/electron pathways. Moves at effective 2 m/s drift velocity under bias.
S 16: Sulfur makes Ag2S trap interface. Immobilizes Ag+ ions until IN pulse overcomes activation barrier.

IN L0, IN L1: Left/right input terminals on Ti traces. Pulse here drives Ag+ migration through S layer.
OUT+, OUT-: Ag core terminals. Measure filament current when D=1. Current ~0 when D=0.
GND: Substrate ground reference. Anchors potential.
Xe Gap: Gas cavity above stack. Inert Xe at 1 GPa prevents oxidation, maintains Ag2S stoichiometry.

IN Pulse: Apply voltage across IN L0/L1. If sufficient, Ag+ breaks free from S trap, forms filament → D=1, OUT current flows.

O1 Contamination: When enabled, O1 diffuses through defective Xe gap, oxidizes Ag to Ag2O, reduces trap depth, causes D leakage.

Pressure Control: Xe pressure modulates gas gap density. At 1 GPa, Xe is inert and blocks O1. Below 0.5 GPa, barrier fails.

Clock: 10kHz sync signal. Photon moves at 2 m/s in Ti traces, ~200µm per clock cycle at this scale.

State equation: D_next = D_prev + α·V_IN - β·O1·P_Xe^-1

Current: I_OUT = D · G0 · (V_OUT+ - V_OUT-) where G0 = 12.9 µS quantum conductance.