Full Kernel Stack 4+1

S16 · Ti22 · Cu29 · Zn30 · Ag47 · Au79 Interactive Orbital Physics
Ti₃SiC₂ + Ag₂S + ZnO Heterostructure

Control Interface

CLOCK
LOW
TRAP DEPTH
0.00eV
LASERS ACTIVE
0
Ag₂S FORMED
NO

System Overview

Full Kernel Stack 4+1 Architecture

Base Layer: Ti₃SiC₂ MAX Phase - Photon bus substrate with Ti d-electrons

Trap Layer: Ag₂S - 0.65eV mid-gap trap from S 3p⁴ + Ag 5s¹ interaction

Barrier Layer: ZnO - Wide bandgap, no trap states, quantum confinement

  • S (16): 3s² 3p⁴ → 2 unpaired p-electrons + 2 holes = 2+2 laser channels
  • Ti (22): 3d² 4s² → Photon bus, mediates Ag₂S trap formation
  • Cu (29): 3d¹⁰ 4s¹ → Deep trap states, causes recombination loss
  • Zn (30): 3d¹⁰ 4s² → Full shell, no traps, insulating barrier
  • Ag (47): 4d¹⁰ 5s¹ → Perfect 0.65eV trap with S, high mobility
  • Au (79): 5d¹⁰ 6s¹ → Leaky trap, plasmonic loss, not stable
S
Sulfur
16
Config: 3s² 3p⁴
2 unpaired p + 2 holes = 2+2 lasers
✓ Perfect Trap
Ti
Titanium
22
Config: 3d² 4s²
Photon bus, d-orbital bridge
⚡ Photon Bus
Cu
Copper
29
Config: 3d¹⁰ 4s¹
Deep trap, recombination center
✗ Deep Trap
Zn
Zinc
30
Config: 3d¹⁰ 4s²
Full shell, no trap states
− No Trap
Ag
Silver
47
Config: 4d¹⁰ 5s¹
Perfect trap with S: 0.65eV
✓ Perfect Trap
Au
Gold
79
Config: 5d¹⁰ 6s¹
Leaky trap, plasmonic loss
≈ Leaky Trap
Ag₂S Trap Formation: S 3p⁴ ⊗ Ag 5s¹ → 0.65eV Mid-Gap State
Ag
S
Ag
S
Ag
S
Ag
0.65 eV Trap
Conduction Band
Valence Band