Full Kernel Stack 4+1 Architecture
Base Layer: Ti₃SiC₂ MAX Phase - Photon bus substrate with Ti d-electrons
Trap Layer: Ag₂S - 0.65eV mid-gap trap from S 3p⁴ + Ag 5s¹ interaction
Barrier Layer: ZnO - Wide bandgap, no trap states, quantum confinement
- S (16): 3s² 3p⁴ → 2 unpaired p-electrons + 2 holes = 2+2 laser channels
- Ti (22): 3d² 4s² → Photon bus, mediates Ag₂S trap formation
- Cu (29): 3d¹⁰ 4s¹ → Deep trap states, causes recombination loss
- Zn (30): 3d¹⁰ 4s² → Full shell, no traps, insulating barrier
- Ag (47): 4d¹⁰ 5s¹ → Perfect 0.65eV trap with S, high mobility
- Au (79): 5d¹⁰ 6s¹ → Leaky trap, plasmonic loss, not stable