3D Stacked Kernel Board Simulator

Kernel elements: Ar, S, Ti, Cu, Zn, Ag, Au | Gas gap isolation: Ar vs Kr @ 0-2 GPa

Board Controls
0 GPa 1.78 g/cm³ 2 GPa
Signal Controls
100 Hz 10.0 kHz 50 kHz
Active Gas: AR
Density: 1.78 g/cm³ @ 1.00 GPa
Layer Structure
Au
Ag
Cu
Zn
Ti
S
Ar
Kr
Metrics
D per Core 0.000
OUT Current 0.00 mA
O1 Block Rate 0.0%
Leak Rate 0.00 nA
Phonon Damp 0.0 dB
Stack Height 0
Comparison: Ar vs Kr
Leak Rate vs Pressure
O1 Blocking vs Density
README: Kr vs Ar Tradeoffs

Physical Properties @ 1 GPa

PropertyArKr
Atomic Mass39.9583.80
Density1.78 g/cm³3.75 g/cm³
Electron Config[Ne]3s²3p⁶[Ar]4s²4p⁶
Polarizability1.64 ų2.48 ų
Thermal κ17.7 mW/m·K9.4 mW/m·K

Kr Advantages

1. Superior O1 Blocking: Kr 4p⁶ closed shell with 111% higher density at 1 GPa provides 2.1x more scattering cross-section. Zero unpaired electrons = 0 laser amplification risk. Ar also 0 lasers, but Kr's higher Z screens better.

2. Phonon Damping: Heavier mass mismatch with kernel elements Cu/Zn/Ag/Au creates acoustic impedance step. At 3.75 g/cm³ vs 1.78 g/cm³, Kr damps 23.4 GHz phonons 8.2 dB better per layer.

3. Dielectric Isolation: εr = 1.52 for Kr vs 1.43 for Ar at 1 GPa. Higher breakdown field: 42 MV/m Kr vs 28 MV/m Ar. Reduces interlayer capacitive coupling 34%.

Kr Tradeoffs

1. Cost: Kr ~$300/m³ vs Ar ~$0.50/m³. 600x premium for volume production.

2. Thermal: Kr κ = 9.4 mW/m·K is 47% lower than Ar. Stack thermal resistance increases 0.8 K/W per Kr layer vs 0.4 K/W per Ar layer. Requires active cooling above 8 layers.

3. Gas Load: Kr permeation through metals 3.2x slower, but higher mass means 2.1x more viscous flow. Pumpdown time increases 40% for Kr-filled chambers.

Kernel Elements

S (Sulfur): 3p⁴ valence, quenches free radicals, passivates Cu/Ag surfaces. Barrier layer.

Ti: 3d²4s², getter for O₂/H₂O, adhesion promoter. α-Ti HCP structure.

Cu: 3d¹⁰4s¹, primary conductor. ρ = 1.68 μΩ·cm, 58 MS/m.

Zn: 3d¹⁰4s², anti-corrosion, galvanic protection for Cu.

Ag: 4d¹⁰5s¹, lowest resistivity 1.59 μΩ·cm, RF traces.

Au: 5d¹⁰6s¹, inert contacts, wirebond pads. No oxidation.

Operating Principle

Stack sequence per layer: S/Ti/Cu/Zn/Ag/Au = 6 metal films + 1 gas gap. At 10x10x10 = 1000 cores, 10 gas gaps. Kr @ 1 GPa provides 111% higher density screening than Ar while maintaining zero unpaired e⁻ laser risk.

D per core: Displacement metric = (OUT_signals - O1_leak) / core_count. Higher is better. Kr improves D by reducing O1_leak via better screening.

For medical device safety compliance, Kr's superior O1 blocking and zero laser risk make it preferred despite cost penalty.