CONCEPTUAL SIMULATION — captures the accepted switching mechanism (a single metal atom migrating
into a lattice vacancy to form a one-atom conductive bridge) and the pinched I–V hysteresis that is
the defining signature of a memristor. Mechanism is real; the resistances and thresholds are
representative, not measured. This is an intuition instrument, not a SPICE/DFT device model.
Blueprint — cross-section
●metal atom (migrates) ·
● boron ·
● nitrogen ·
the gap is 0.33 nm — one atomic layer. No room for a filament:
in a monolayer the "bridge" is a single atom.
Prototype — I–V pinched hysteresis
state—R—V0.00 VI0.0 µA
voltage−3V+3V0.00 V
Drag the voltage. Past +1.2 V the atom drifts into the vacancy → bridge forms → ON (low R).
Past −1.2 V it drifts out → OFF (high R). Between the thresholds it holds — that's the memory.
At V=0 the current is always 0: the loop is pinched at the origin (the memristor's fingerprint).